Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism

Stress-induced leakage current (SILC) in ultrathin oxide metal–oxide–semiconductor devices has been quantitatively modeled by the trap-assisted tunneling mechanism. These results are compared with experimental data on samples with oxide thickness ranging from 40 to 80 Å. This model accurately descri...

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Veröffentlicht in:	Applied physics letters 1997-06, Vol.70 (25), p.3407-3409
Hauptverfasser:	Chou, Anthony I., Lai, Kafai, Kumar, Kiran, Chowdhury, Prasenjit, Lee, Jack C.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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