Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption

The energy distribution of the nitrogen antibonding electron states in the hexagonal epitaxial layers of AlN, GaN, and InN and cubic epitaxial layers of GaN and InN along pxy plane and pz direction is reported. The study was performed by the polarized x-ray absorption at the K edge of N. A strong po...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied Physics Letters 1997-05, Vol.70 (20), p.2711-2713
Hauptverfasser:	Lawniczak-Jablonska, K., Suski, T., Liliental-Weber, Z., Gullikson, E. M., Underwood, J. H., Perera, R. C. C., Drummond, T. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	ABSORPTION SPECTRA ADVANCED LIGHT SOURCE ALUMINIUM COMPOUNDS ALUMINIUM NITRIDES ELECTRONIC STRUCTURE GALLIUM COMPOUNDS GALLIUM NITRIDES HYBRIDIZATION INDIUM COMPOUNDS INDIUM NITRIDES MATERIALS SCIENCE MOLECULAR BEAM EPITAXY PHYSICS POLARIZATION X-RAY SPECTRA
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!