Valence subband structures of (101̄0)-GaN/AlGaN strained quantum wells calculated by the tight-binding method

The effect of biaxial strain on the valence bands in (101̄0)-GaN/AlGaN quantum wells (QWs) is theoretically investigated, using the sp3 tight-binding method. The effective mass around the valence band edge in unstrained (101̄0) QWs is reduced to about 1/2 that of (0001) QWs. Under compressive strain...

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Veröffentlicht in:	Applied physics letters 1997-04, Vol.70 (16), p.2159-2161
Hauptverfasser:	Niwa, Atsuko, Ohtoshi, Tsukuru, Kuroda, Takao
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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