Structural and magnetic properties of epitaxial (0001) MnSb thin films grown on (111) B GaAs: Influence of interface quality

We have succeeded in growing epitaxial (0001) MnSb/(111)B GaAs films with an atomically flat heterointerface using a GaAs buffer layer. For MnSb films with a thickness of 2–20 Å, the in-plane strain in the films arising from a lattice mismatch between MnSb and GaAs is compressive, which was observed...

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Veröffentlicht in:	Applied physics letters 1997-05, Vol.70 (18), p.2472-2474
Hauptverfasser:	Akinaga, H., Miyanishi, S., Van Roy, W., Kuo, L. H.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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