Interfacial hardness enhancement in deuterium annealed 0.25 μm channel metal oxide semiconductor transistors

Interfacial degradation induced by hot-electron injection has been studied in n-channel metal oxide semiconductor transistors with channel lengths down to 0.2 μm. The devices were annealed in either H2 or D2 containing atmospheres. The channel transconductance and threshold voltage variations induce...

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Veröffentlicht in:	Applied physics letters 1997-06, Vol.70 (22), p.2999-3001
Hauptverfasser:	Devine, R. A. B., Autran, J.-L., Warren, W. L., Vanheusdan, K. L., Rostaing, J.-C.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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