Local conduction band offset of GaSb self-assembled quantum dots on GaAs

Local conduction band offset of GaSb self-assembled quantum dots on GaAs

GaSb self-assembled quantum dots grown by molecular beam epitaxy on GaAs exhibit a staggered (type II) band lineup with a potential barrier in the conduction band. Traditional methods cannot measure this local band offset because of the small (∼50 nm) lateral dot size. The nanometer resolution of ba...

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Veröffentlicht in:Applied physics letters 1997-03, Vol.70 (12), p.1590-1592
Hauptverfasser: Rubin, M. E., Blank, H. R., Chin, M. A., Kroemer, H., Narayanamurti, V.
Format: Artikel
Sprache:eng
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Zusammenfassung:GaSb self-assembled quantum dots grown by molecular beam epitaxy on GaAs exhibit a staggered (type II) band lineup with a potential barrier in the conduction band. Traditional methods cannot measure this local band offset because of the small (∼50 nm) lateral dot size. The nanometer resolution of ballistic electron emission microscopy is exploited to image individual dots and measure a local band offset of 0.08±0.02 eV.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.118624