Optimization of sub 3 nm gate dielectrics grown by rapid thermal oxidation in a nitric oxide ambient

The vertical scaling of oxide thickness in the ultra large scale integrated era places stringent requirements on oxide quality. In this letter we report optimization studies in the growth of ultrathin oxynitrides in the sub 3 nm range. The oxynitride growth technique used involved self-limiting grow...

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Veröffentlicht in:	Applied physics letters 1997-01, Vol.70 (3), p.384-386
Hauptverfasser:	Kumar, Kiran, Chou, Anthony I., Lin, Chuan, Choudhury, Prasenjit, Lee, Jack C., Lowell, John K.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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