Effect of oxygen incorporation at AlGaAs/GaAs interfaces on the electrical properties of two-dimensional electron gas

We have investigated the carrier concentration and mobility of the two-dimensional electron gas (2DEG) in AlGaAs/GaAs selectively doped heterojunction structures that involve oxygen impurities at the heterointerfaces. The oxygen impurities were incorporated during growth interruption of molecular be...

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Veröffentlicht in:	Applied physics letters 1997-02, Vol.70 (5), p.595-597
Hauptverfasser:	Kadoya, Y., Noge, H., Someya, T., Sakaki, H.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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