Stimulated emission at 300 K from photopumped GaN grown by plasma-assisted molecular beam epitaxy with an inductively coupled plasma source

GaN epilayers have been grown on basal plane (0001) sapphire by plasma-assisted molecular beam epitaxy (MBE) with a novel, inductively coupled nitrogen plasma source. Films grown at 700 °C generate stimulated emission at 300 K when optically pumped in vertical geometry with ∼3.5 eV (λ=355 nm) photon...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied Physics Letters 1997-02, Vol.70 (7), p.811-813
Hauptverfasser:	Gluschenkov, O., Myoung, J. M., Shim, K. H., Kim, K., Figen, Z. G., Gao, J., Eden, J. G.
Format:	Artikel
Sprache:	eng
Schlagworte:	DEPOSITION ELECTRON-HOLE COUPLING ENGINEERING NOT INCLUDED IN OTHER CATEGORIES GALLIUM NITRIDES MATERIALS SCIENCE MOLECULAR BEAM EPITAXY OPTICAL PUMPING PHOTOLUMINESCENCE PLASMA STIMULATED EMISSION THIN FILMS
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!