Evaluation of molecular beam epitaxially grown AlGaAs/GaAs heterojunctions for bipolar transistor with InGaAs emitter contact layer

Molecular beam epitaxially grown AlGaAs/GaAs heterojunctions were characterized by isothermal capacitance transient spectroscopy to study the performance of bipolar transistors with lattice-mismatched InGaAs emitter contact layer. A deep level around 0.48 eV is found to be a recombination center in...

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Veröffentlicht in:	Applied physics letters 1996-10, Vol.69 (17), p.2516-2518
Hauptverfasser:	Izumi, Shigekazu, Sakai, Masayuki, Shimura, Teruyuki, Hayafuji, Norio, Sato, Kazuhiko, Otsubo, Mutsuyuki
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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