Inversion domains in GaN grown on sapphire

Planar defects observed in GaN films grown on (0001) sapphire have been identified as inversion domain boundaries (IDBs) by a combination of high resolution transmission electron microscopy, multiple dark field imaging, and convergent beam electron diffraction techniques. Films grown by molecular be...

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Veröffentlicht in:	Applied Physics Letters 1996-10, Vol.69 (16), p.2394-2396
Hauptverfasser:	Romano, L. T., Northrup, J. E., O’Keefe, M. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALKYLATING AGENTS CHEMICAL VAPOR DEPOSITION CRYSTAL DEFECTS CVD DOMAIN STRUCTURE ELECTRON DIFFRACTION GALLIUM NITRIDES MATERIALS SCIENCE MICROSTRUCTURE MOLECULAR BEAM EPITAXY SAPPHIRE THIN FILMS VAPOR PHASE EPITAXY VPE
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