Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots

Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots

Large energy shifts in the luminescence emission from strained InGaAs quantum dots are observed as a result of postgrowth annealing and also when raising the upper cladding layer growth temperatures. These blueshifts occur concurrently with narrowing (from 61 to 24 meV) of the full width at half-max...

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Veröffentlicht in:Applied physics letters 1996-09, Vol.69 (13), p.1888-1890
Hauptverfasser: Leon, R., Kim, Yong, Jagadish, C., Gal, M., Zou, J., Cockayne, D. J. H.
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container_end_page 1890
container_issue 13
container_start_page 1888
container_title Applied physics letters
container_volume 69
creator Leon, R.
Kim, Yong
Jagadish, C.
Gal, M.
Zou, J.
Cockayne, D. J. H.
description Large energy shifts in the luminescence emission from strained InGaAs quantum dots are observed as a result of postgrowth annealing and also when raising the upper cladding layer growth temperatures. These blueshifts occur concurrently with narrowing (from 61 to 24 meV) of the full width at half-maxima for the emission from the quantum dot ensemble. These energy shifts can be explained by interdiffusion or intermixing of the interfaces rather than strain effects due to variations in capping layer thickness. Temperature behavior of the luminescence in annealed and nonannealed samples indicates a change in the shape and depth of the quantum dot confining potential. Quenching of the wetting layer luminescence after interdiffusion is also observed.
doi_str_mv 10.1063/1.117467
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title Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
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