Effects of vacuum annealing on the optical properties of porous silicon

Effects of vacuum annealing on the optical properties of porous silicon

The effects of vacuum annealing on the optical absorption spectra in the visible and infrared ranges, photoluminescence intensity, and concentration of paramagnetic centers in free-standing porous silicon films were investigated in a temperature range of 100–600 °C. It was found that heat-induced hy...

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Veröffentlicht in:Applied physics letters 1996-11, Vol.69 (19), p.2852-2854
Hauptverfasser: Balagurov, L. A., Yarkin, D. G., Petrova, E. A., Orlov, A. F., Karyagin, S. N.
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container_end_page 2854
container_issue 19
container_start_page 2852
container_title Applied physics letters
container_volume 69
creator Balagurov, L. A.
Yarkin, D. G.
Petrova, E. A.
Orlov, A. F.
Karyagin, S. N.
description The effects of vacuum annealing on the optical absorption spectra in the visible and infrared ranges, photoluminescence intensity, and concentration of paramagnetic centers in free-standing porous silicon films were investigated in a temperature range of 100–600 °C. It was found that heat-induced hydrogen desorption decreased the porous silicon band gap, which suggests that band-gap energy depends on hydrogen coverage of nanoparticles. The annealing also leads to increasing concentration of defects that were identified as silicon dangling bonds. The energy distribution of the dangling-bond states was estimated from the absorption spectrum.
doi_str_mv 10.1063/1.117340
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title Effects of vacuum annealing on the optical properties of porous silicon
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