Photoemission spectroscopy studies of the surface of GaN films grown by vapor phase epitaxy
Surfaces of GaN films have been investigated with photoemission spectroscopy. The measured valence band is in good agreement with band structure calculations and correlates well with tunneling luminescence measurements performed on the same samples. The effect of N depletion on band structure is exp...
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| Veröffentlicht in: | Applied physics letters 1996-11, Vol.69 (22), p.3351-3353 |
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| Hauptverfasser: | , , , , , |
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| Sprache: | eng |
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| container_end_page | 3353 |
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| container_issue | 22 |
| container_start_page | 3351 |
| container_title | Applied physics letters |
| container_volume | 69 |
| creator | Ma, Jian Garni, B. Perkins, N. O’Brien, W. L. Kuech, T. F. Lagally, M. G. |
| description | Surfaces of GaN films have been investigated with photoemission spectroscopy. The measured valence band is in good agreement with band structure calculations and correlates well with tunneling luminescence measurements performed on the same samples. The effect of N depletion on band structure is explored, clarifying disagreements in previous photoemission measurements. |
| doi_str_mv | 10.1063/1.117303 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1996-11, Vol.69 (22), p.3351-3353 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_117303 |
| source | AIP Digital Archive |
| title | Photoemission spectroscopy studies of the surface of GaN films grown by vapor phase epitaxy |
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