A gratingless wavelength stabilized semiconductor laser

A single frequency laser structure is obtained by coupling a high order mode of a semiconductor waveguide to a low index polymer waveguide. The device does not require a grating or regrowth, emits in a mode compatible with optical fibers, and may be immune to catastrophic mirror damage. The epilayer...

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Veröffentlicht in:Applied physics letters 1996-11, Vol.69 (19), p.2807-2809
Hauptverfasser: Pezeshki, Bardia, Agahi, Farid, Kash, Jeffrey A.
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creator Pezeshki, Bardia
Agahi, Farid
Kash, Jeffrey A.
description A single frequency laser structure is obtained by coupling a high order mode of a semiconductor waveguide to a low index polymer waveguide. The device does not require a grating or regrowth, emits in a mode compatible with optical fibers, and may be immune to catastrophic mirror damage. The epilayers of the semiconductor waveguide use quarterwave reflectors to support a mode with a low enough effective index to phase match to the polymer waveguide. The coupling between the two waveguides is highly frequency selective and therefore stabilizes the wavelength. Preliminary structures emit in a single longitudinal and spatial mode, have 30 dB of sidemode suppression, and emit about 6 mW into a fiber compatible mode.
doi_str_mv 10.1063/1.116850
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title A gratingless wavelength stabilized semiconductor laser
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