A gratingless wavelength stabilized semiconductor laser
A single frequency laser structure is obtained by coupling a high order mode of a semiconductor waveguide to a low index polymer waveguide. The device does not require a grating or regrowth, emits in a mode compatible with optical fibers, and may be immune to catastrophic mirror damage. The epilayer...
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Veröffentlicht in: | Applied physics letters 1996-11, Vol.69 (19), p.2807-2809 |
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creator | Pezeshki, Bardia Agahi, Farid Kash, Jeffrey A. |
description | A single frequency laser structure is obtained by coupling a high order mode of a semiconductor waveguide to a low index polymer waveguide. The device does not require a grating or regrowth, emits in a mode compatible with optical fibers, and may be immune to catastrophic mirror damage. The epilayers of the semiconductor waveguide use quarterwave reflectors to support a mode with a low enough effective index to phase match to the polymer waveguide. The coupling between the two waveguides is highly frequency selective and therefore stabilizes the wavelength. Preliminary structures emit in a single longitudinal and spatial mode, have 30 dB of sidemode suppression, and emit about 6 mW into a fiber compatible mode. |
doi_str_mv | 10.1063/1.116850 |
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The device does not require a grating or regrowth, emits in a mode compatible with optical fibers, and may be immune to catastrophic mirror damage. The epilayers of the semiconductor waveguide use quarterwave reflectors to support a mode with a low enough effective index to phase match to the polymer waveguide. The coupling between the two waveguides is highly frequency selective and therefore stabilizes the wavelength. Preliminary structures emit in a single longitudinal and spatial mode, have 30 dB of sidemode suppression, and emit about 6 mW into a fiber compatible mode.</abstract><doi>10.1063/1.116850</doi><tpages>3</tpages></addata></record> |
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title | A gratingless wavelength stabilized semiconductor laser |
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