Transparent zinc oxide films prepared by electrochemical reaction
Transparent zinc oxide (ZnO) films has been cathodically deposited on conductive glasses from a simple aqueous zinc nitrate electrolyte kept at 335 K. ZnO films prepared had a wurtzite structure and exhibited an optical band gap energy of 3.3 eV which is characteristic of ZnO. A 2-μm-thick ZnO film...
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| Veröffentlicht in: | Applied physics letters 1996-04, Vol.68 (17), p.2439-2440 |
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| container_title | Applied physics letters |
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| creator | Izaki, Masanobu Omi, Takashi |
| description | Transparent zinc oxide (ZnO) films has been cathodically deposited on conductive glasses from a simple aqueous zinc nitrate electrolyte kept at 335 K. ZnO films prepared had a wurtzite structure and exhibited an optical band gap energy of 3.3 eV which is characteristic of ZnO. A 2-μm-thick ZnO film with an optical transmittance of 72% has been deposited by electrolysis only for approximately 20 minutes at the cathodic potential of −1.0 V compared with the Ag/AgCl reference electrode. |
| doi_str_mv | 10.1063/1.116160 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_116160</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_116160</sourcerecordid><originalsourceid>FETCH-LOGICAL-c361t-2461b3fce27321cc559325328d2f3f1302eb458e0cc7b5f90bba9662e48e5253</originalsourceid><addsrcrecordid>eNotj0tLxDAUhYMoWEfBn5Clm465uU3aLofBFwy46b4ktzdY6YukC8df7wzj6nA4Hwc-IR5BbUFZfIYtgAWrrkQGqixzBKiuRaaUwtzWBm7FXUrfp2o0YiZ2TXRTWlzkaZW__URy_uk7lqEfxiSXyOepk_4oeWBa40xfPPbkBhnZ0drP0724CW5I_PCfG9G8vjT79_zw-fax3x1yQgtrrgsLHgOxLlEDkTE1aoO66nTAAKg0-8JUrIhKb0KtvHe1tZqLis0J3Iinyy3FOaXIoV1iP7p4bEG1Z_MW2os5_gGyAUqF</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Transparent zinc oxide films prepared by electrochemical reaction</title><source>AIP Digital Archive</source><creator>Izaki, Masanobu ; Omi, Takashi</creator><creatorcontrib>Izaki, Masanobu ; Omi, Takashi</creatorcontrib><description>Transparent zinc oxide (ZnO) films has been cathodically deposited on conductive glasses from a simple aqueous zinc nitrate electrolyte kept at 335 K. ZnO films prepared had a wurtzite structure and exhibited an optical band gap energy of 3.3 eV which is characteristic of ZnO. A 2-μm-thick ZnO film with an optical transmittance of 72% has been deposited by electrolysis only for approximately 20 minutes at the cathodic potential of −1.0 V compared with the Ag/AgCl reference electrode.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.116160</identifier><language>eng</language><ispartof>Applied physics letters, 1996-04, Vol.68 (17), p.2439-2440</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-2461b3fce27321cc559325328d2f3f1302eb458e0cc7b5f90bba9662e48e5253</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Izaki, Masanobu</creatorcontrib><creatorcontrib>Omi, Takashi</creatorcontrib><title>Transparent zinc oxide films prepared by electrochemical reaction</title><title>Applied physics letters</title><description>Transparent zinc oxide (ZnO) films has been cathodically deposited on conductive glasses from a simple aqueous zinc nitrate electrolyte kept at 335 K. ZnO films prepared had a wurtzite structure and exhibited an optical band gap energy of 3.3 eV which is characteristic of ZnO. A 2-μm-thick ZnO film with an optical transmittance of 72% has been deposited by electrolysis only for approximately 20 minutes at the cathodic potential of −1.0 V compared with the Ag/AgCl reference electrode.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNotj0tLxDAUhYMoWEfBn5Clm465uU3aLofBFwy46b4ktzdY6YukC8df7wzj6nA4Hwc-IR5BbUFZfIYtgAWrrkQGqixzBKiuRaaUwtzWBm7FXUrfp2o0YiZ2TXRTWlzkaZW__URy_uk7lqEfxiSXyOepk_4oeWBa40xfPPbkBhnZ0drP0724CW5I_PCfG9G8vjT79_zw-fax3x1yQgtrrgsLHgOxLlEDkTE1aoO66nTAAKg0-8JUrIhKb0KtvHe1tZqLis0J3Iinyy3FOaXIoV1iP7p4bEG1Z_MW2os5_gGyAUqF</recordid><startdate>19960422</startdate><enddate>19960422</enddate><creator>Izaki, Masanobu</creator><creator>Omi, Takashi</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19960422</creationdate><title>Transparent zinc oxide films prepared by electrochemical reaction</title><author>Izaki, Masanobu ; Omi, Takashi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-2461b3fce27321cc559325328d2f3f1302eb458e0cc7b5f90bba9662e48e5253</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Izaki, Masanobu</creatorcontrib><creatorcontrib>Omi, Takashi</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Izaki, Masanobu</au><au>Omi, Takashi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transparent zinc oxide films prepared by electrochemical reaction</atitle><jtitle>Applied physics letters</jtitle><date>1996-04-22</date><risdate>1996</risdate><volume>68</volume><issue>17</issue><spage>2439</spage><epage>2440</epage><pages>2439-2440</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Transparent zinc oxide (ZnO) films has been cathodically deposited on conductive glasses from a simple aqueous zinc nitrate electrolyte kept at 335 K. ZnO films prepared had a wurtzite structure and exhibited an optical band gap energy of 3.3 eV which is characteristic of ZnO. A 2-μm-thick ZnO film with an optical transmittance of 72% has been deposited by electrolysis only for approximately 20 minutes at the cathodic potential of −1.0 V compared with the Ag/AgCl reference electrode.</abstract><doi>10.1063/1.116160</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1996-04, Vol.68 (17), p.2439-2440 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_116160 |
| source | AIP Digital Archive |
| title | Transparent zinc oxide films prepared by electrochemical reaction |
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