Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors

Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors

GaAsSb is a low band gap, lattice matched to InP, alternative to GaInAs. Growth and doping using diethyltellurium and carbon tetrachloride were investigated. Hole concentrations up to 1.3×1020 cm−3 have been achieved in as-grown carbon-doped GaAsSb [i.e., no postgrowth annealing was necessary for do...

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Veröffentlicht in:Applied physics letters 1996-03, Vol.68 (10), p.1386-1388
Hauptverfasser: McDermott, B. T., Gertner, E. R., Pittman, S., Seabury, C. W., Chang, M. F.
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container_issue 10
container_start_page 1386
container_title Applied physics letters
container_volume 68
creator McDermott, B. T.
Gertner, E. R.
Pittman, S.
Seabury, C. W.
Chang, M. F.
description GaAsSb is a low band gap, lattice matched to InP, alternative to GaInAs. Growth and doping using diethyltellurium and carbon tetrachloride were investigated. Hole concentrations up to 1.3×1020 cm−3 have been achieved in as-grown carbon-doped GaAsSb [i.e., no postgrowth annealing was necessary for dopant activation, a key requirement for n-p-n heterojunction bipolar transistor (HBT) structures]. This is a sevenfold improvement over the best carbon-doped InGaAs reported by metalorganic chemical vapor deposition. Hall measurements indicate that GaAsSb’s hole mobility is 55%–60% of GaInAs’s, for a given carrier concentration. InP HBTs with carbon-doped GaAsSb base are demonstrated.
doi_str_mv 10.1063/1.116088
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_116088</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_116088</sourcerecordid><originalsourceid>FETCH-LOGICAL-c361t-208903de49139eff91e1660148a4097ae2f6905c1f3c9ddd8890953dc5d5c3cb3</originalsourceid><addsrcrecordid>eNotkE1LAzEURYMoWKvgT8jSzdS8vk46WZaitVBQUNfDaz7alGkyJrHiv7daV5dzudzFYewWxAiExHsYAUjRNGdsAGI6rRCgOWcDIQRWUtVwya5y3h2xHiMO2Mcixa-y5RQMN7H3YcOj4wua5dc1P3jie1uoi2lDwWuut3bvNXX8QH1M3Ng-Zl98DNwdcRle-NYWm-LuM-i_eu372FHiJVHIPpeY8jW7cNRle_OfQ_b--PA2f6pWz4vlfLaqNEoo1Vg0SqCxEwWorHMKLEgpYNLQRKgp2bGTStQaHGpljGmOc1Wj0bWpNeo1Dtnd6VenmHOyru2T31P6bkG0v6paaE-q8Ac4iVzj</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors</title><source>AIP Digital Archive</source><creator>McDermott, B. T. ; Gertner, E. R. ; Pittman, S. ; Seabury, C. W. ; Chang, M. F.</creator><creatorcontrib>McDermott, B. T. ; Gertner, E. R. ; Pittman, S. ; Seabury, C. W. ; Chang, M. F.</creatorcontrib><description>GaAsSb is a low band gap, lattice matched to InP, alternative to GaInAs. Growth and doping using diethyltellurium and carbon tetrachloride were investigated. Hole concentrations up to 1.3×1020 cm−3 have been achieved in as-grown carbon-doped GaAsSb [i.e., no postgrowth annealing was necessary for dopant activation, a key requirement for n-p-n heterojunction bipolar transistor (HBT) structures]. This is a sevenfold improvement over the best carbon-doped InGaAs reported by metalorganic chemical vapor deposition. Hall measurements indicate that GaAsSb’s hole mobility is 55%–60% of GaInAs’s, for a given carrier concentration. InP HBTs with carbon-doped GaAsSb base are demonstrated.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.116088</identifier><language>eng</language><ispartof>Applied physics letters, 1996-03, Vol.68 (10), p.1386-1388</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-208903de49139eff91e1660148a4097ae2f6905c1f3c9ddd8890953dc5d5c3cb3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>McDermott, B. T.</creatorcontrib><creatorcontrib>Gertner, E. R.</creatorcontrib><creatorcontrib>Pittman, S.</creatorcontrib><creatorcontrib>Seabury, C. W.</creatorcontrib><creatorcontrib>Chang, M. F.</creatorcontrib><title>Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors</title><title>Applied physics letters</title><description>GaAsSb is a low band gap, lattice matched to InP, alternative to GaInAs. Growth and doping using diethyltellurium and carbon tetrachloride were investigated. Hole concentrations up to 1.3×1020 cm−3 have been achieved in as-grown carbon-doped GaAsSb [i.e., no postgrowth annealing was necessary for dopant activation, a key requirement for n-p-n heterojunction bipolar transistor (HBT) structures]. This is a sevenfold improvement over the best carbon-doped InGaAs reported by metalorganic chemical vapor deposition. Hall measurements indicate that GaAsSb’s hole mobility is 55%–60% of GaInAs’s, for a given carrier concentration. InP HBTs with carbon-doped GaAsSb base are demonstrated.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNotkE1LAzEURYMoWKvgT8jSzdS8vk46WZaitVBQUNfDaz7alGkyJrHiv7daV5dzudzFYewWxAiExHsYAUjRNGdsAGI6rRCgOWcDIQRWUtVwya5y3h2xHiMO2Mcixa-y5RQMN7H3YcOj4wua5dc1P3jie1uoi2lDwWuut3bvNXX8QH1M3Ng-Zl98DNwdcRle-NYWm-LuM-i_eu372FHiJVHIPpeY8jW7cNRle_OfQ_b--PA2f6pWz4vlfLaqNEoo1Vg0SqCxEwWorHMKLEgpYNLQRKgp2bGTStQaHGpljGmOc1Wj0bWpNeo1Dtnd6VenmHOyru2T31P6bkG0v6paaE-q8Ac4iVzj</recordid><startdate>19960304</startdate><enddate>19960304</enddate><creator>McDermott, B. T.</creator><creator>Gertner, E. R.</creator><creator>Pittman, S.</creator><creator>Seabury, C. W.</creator><creator>Chang, M. F.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19960304</creationdate><title>Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors</title><author>McDermott, B. T. ; Gertner, E. R. ; Pittman, S. ; Seabury, C. W. ; Chang, M. F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-208903de49139eff91e1660148a4097ae2f6905c1f3c9ddd8890953dc5d5c3cb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>McDermott, B. T.</creatorcontrib><creatorcontrib>Gertner, E. R.</creatorcontrib><creatorcontrib>Pittman, S.</creatorcontrib><creatorcontrib>Seabury, C. W.</creatorcontrib><creatorcontrib>Chang, M. F.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>McDermott, B. T.</au><au>Gertner, E. R.</au><au>Pittman, S.</au><au>Seabury, C. W.</au><au>Chang, M. F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors</atitle><jtitle>Applied physics letters</jtitle><date>1996-03-04</date><risdate>1996</risdate><volume>68</volume><issue>10</issue><spage>1386</spage><epage>1388</epage><pages>1386-1388</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>GaAsSb is a low band gap, lattice matched to InP, alternative to GaInAs. Growth and doping using diethyltellurium and carbon tetrachloride were investigated. Hole concentrations up to 1.3×1020 cm−3 have been achieved in as-grown carbon-doped GaAsSb [i.e., no postgrowth annealing was necessary for dopant activation, a key requirement for n-p-n heterojunction bipolar transistor (HBT) structures]. This is a sevenfold improvement over the best carbon-doped InGaAs reported by metalorganic chemical vapor deposition. Hall measurements indicate that GaAsSb’s hole mobility is 55%–60% of GaInAs’s, for a given carrier concentration. InP HBTs with carbon-doped GaAsSb base are demonstrated.</abstract><doi>10.1063/1.116088</doi><tpages>3</tpages></addata></record>
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title Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T15%3A08%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20and%20doping%20of%20GaAsSb%20via%20metalorganic%20chemical%20vapor%20deposition%20for%20InP%20heterojunction%20bipolar%20transistors&rft.jtitle=Applied%20physics%20letters&rft.au=McDermott,%20B.%20T.&rft.date=1996-03-04&rft.volume=68&rft.issue=10&rft.spage=1386&rft.epage=1388&rft.pages=1386-1388&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.116088&rft_dat=%3Ccrossref%3E10_1063_1_116088%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true