High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN

Platinum (Pt) and palladium (Pd) Schottky diodes on n-type GaN grown by metalorganic chemical vapor deposition were achieved and investigated. Aluminum was used for ohmic contacts. Barrier heights were determined to be as high as ΦB=1.13 eV by the current–voltage (I–V) method and ΦB=1.27 eV by the c...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 1996-02, Vol.68 (9), p.1267-1269
Hauptverfasser:	Wang, Lei, Nathan, M. I., Lim, T-H., Khan, M. A., Chen, Q.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!