High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN
Platinum (Pt) and palladium (Pd) Schottky diodes on n-type GaN grown by metalorganic chemical vapor deposition were achieved and investigated. Aluminum was used for ohmic contacts. Barrier heights were determined to be as high as ΦB=1.13 eV by the current–voltage (I–V) method and ΦB=1.27 eV by the c...
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| Veröffentlicht in: | Applied physics letters 1996-02, Vol.68 (9), p.1267-1269 |
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| container_end_page | 1269 |
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| container_issue | 9 |
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| container_title | Applied physics letters |
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| creator | Wang, Lei Nathan, M. I. Lim, T-H. Khan, M. A. Chen, Q. |
| description | Platinum (Pt) and palladium (Pd) Schottky diodes on n-type GaN grown by metalorganic chemical vapor deposition were achieved and investigated. Aluminum was used for ohmic contacts. Barrier heights were determined to be as high as ΦB=1.13 eV by the current–voltage (I–V) method and ΦB=1.27 eV by the capacitance–voltage (C–V) method for the Pt/GaN diode, and ΦB=1.11 eV, ΦB=0.96 eV, and ΦB=1.24 eV by I–V, activation energy (I–V–T), and C–V methods for the Pd/GaN diode, respectively. The ideality factors were obtained to be n∼1.10. |
| doi_str_mv | 10.1063/1.115948 |
| format | Article |
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A. ; Chen, Q.</creator><creatorcontrib>Wang, Lei ; Nathan, M. I. ; Lim, T-H. ; Khan, M. A. ; Chen, Q.</creatorcontrib><description>Platinum (Pt) and palladium (Pd) Schottky diodes on n-type GaN grown by metalorganic chemical vapor deposition were achieved and investigated. Aluminum was used for ohmic contacts. Barrier heights were determined to be as high as ΦB=1.13 eV by the current–voltage (I–V) method and ΦB=1.27 eV by the capacitance–voltage (C–V) method for the Pt/GaN diode, and ΦB=1.11 eV, ΦB=0.96 eV, and ΦB=1.24 eV by I–V, activation energy (I–V–T), and C–V methods for the Pd/GaN diode, respectively. The ideality factors were obtained to be n∼1.10.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.115948</identifier><language>eng</language><ispartof>Applied physics letters, 1996-02, Vol.68 (9), p.1267-1269</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-13796bfda761c7edf7206fcc074ed0dfe8402d44f5101850551bfc72046ce77d3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Wang, Lei</creatorcontrib><creatorcontrib>Nathan, M. I.</creatorcontrib><creatorcontrib>Lim, T-H.</creatorcontrib><creatorcontrib>Khan, M. A.</creatorcontrib><creatorcontrib>Chen, Q.</creatorcontrib><title>High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN</title><title>Applied physics letters</title><description>Platinum (Pt) and palladium (Pd) Schottky diodes on n-type GaN grown by metalorganic chemical vapor deposition were achieved and investigated. Aluminum was used for ohmic contacts. Barrier heights were determined to be as high as ΦB=1.13 eV by the current–voltage (I–V) method and ΦB=1.27 eV by the capacitance–voltage (C–V) method for the Pt/GaN diode, and ΦB=1.11 eV, ΦB=0.96 eV, and ΦB=1.24 eV by I–V, activation energy (I–V–T), and C–V methods for the Pd/GaN diode, respectively. 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A. ; Chen, Q.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-13796bfda761c7edf7206fcc074ed0dfe8402d44f5101850551bfc72046ce77d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Lei</creatorcontrib><creatorcontrib>Nathan, M. I.</creatorcontrib><creatorcontrib>Lim, T-H.</creatorcontrib><creatorcontrib>Khan, M. A.</creatorcontrib><creatorcontrib>Chen, Q.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Lei</au><au>Nathan, M. I.</au><au>Lim, T-H.</au><au>Khan, M. A.</au><au>Chen, Q.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN</atitle><jtitle>Applied physics letters</jtitle><date>1996-02-26</date><risdate>1996</risdate><volume>68</volume><issue>9</issue><spage>1267</spage><epage>1269</epage><pages>1267-1269</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Platinum (Pt) and palladium (Pd) Schottky diodes on n-type GaN grown by metalorganic chemical vapor deposition were achieved and investigated. Aluminum was used for ohmic contacts. Barrier heights were determined to be as high as ΦB=1.13 eV by the current–voltage (I–V) method and ΦB=1.27 eV by the capacitance–voltage (C–V) method for the Pt/GaN diode, and ΦB=1.11 eV, ΦB=0.96 eV, and ΦB=1.24 eV by I–V, activation energy (I–V–T), and C–V methods for the Pd/GaN diode, respectively. The ideality factors were obtained to be n∼1.10.</abstract><doi>10.1063/1.115948</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1996-02, Vol.68 (9), p.1267-1269 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_115948 |
| source | AIP Digital Archive |
| title | High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN |
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