Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement

We have developed a method, anodization controlled miniaturization enhancement (ACME), to make ultrasmall tunnel junctions. Anodization of electron-beam fabricated Al/Al2O3/Al tunnel junctions reduces their effective areas and capacitances, which realizes single electron transistors operating at hig...

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Veröffentlicht in:	Applied physics letters 1996-01, Vol.68 (2), p.275-277
Hauptverfasser:	Nakamura, Y., Klein, D. L., Tsai, J. S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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