Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement
We have developed a method, anodization controlled miniaturization enhancement (ACME), to make ultrasmall tunnel junctions. Anodization of electron-beam fabricated Al/Al2O3/Al tunnel junctions reduces their effective areas and capacitances, which realizes single electron transistors operating at hig...
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| Veröffentlicht in: | Applied physics letters 1996-01, Vol.68 (2), p.275-277 |
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| container_title | Applied physics letters |
| container_volume | 68 |
| creator | Nakamura, Y. Klein, D. L. Tsai, J. S. |
| description | We have developed a method, anodization controlled miniaturization enhancement (ACME), to make ultrasmall tunnel junctions. Anodization of electron-beam fabricated Al/Al2O3/Al tunnel junctions reduces their effective areas and capacitances, which realizes single electron transistors operating at high temperatures up to nearly 30 K. The limit of the increase in the charging energy is attributed to the initial scattering in the junction sizes. |
| doi_str_mv | 10.1063/1.115661 |
| format | Article |
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L.</au><au>Tsai, J. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement</atitle><jtitle>Applied physics letters</jtitle><date>1996-01-08</date><risdate>1996</risdate><volume>68</volume><issue>2</issue><spage>275</spage><epage>277</epage><pages>275-277</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We have developed a method, anodization controlled miniaturization enhancement (ACME), to make ultrasmall tunnel junctions. Anodization of electron-beam fabricated Al/Al2O3/Al tunnel junctions reduces their effective areas and capacitances, which realizes single electron transistors operating at high temperatures up to nearly 30 K. 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| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1996-01, Vol.68 (2), p.275-277 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_115661 |
| source | AIP Digital Archive |
| title | Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement |
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