Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-ozone cleaning
The preoxidation cleaning of silicon carbide surfaces (3C, 4H, 6H polytypes) by exposing them to ultraviolet radiation and oxygen is shown to produce a significant improvement in the electronic properties of SiC/SiO2 interfaces. It is found that this treatment results in a removal of defect species,...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 1996-04, Vol.68 (15), p.2141-2143 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2143 |
|---|---|
| container_issue | 15 |
| container_start_page | 2141 |
| container_title | Applied physics letters |
| container_volume | 68 |
| creator | Afanas’ev, V. V. Stesmans, A. Bassler, M. Pensl, G. Schulz, M. J. Harris, C. I. |
| description | The preoxidation cleaning of silicon carbide surfaces (3C, 4H, 6H polytypes) by exposing them to ultraviolet radiation and oxygen is shown to produce a significant improvement in the electronic properties of SiC/SiO2 interfaces. It is found that this treatment results in a removal of defect species, otherwise present at the SiC surface after thermal oxidation of SiC. Carbon clusters are proposed as the attacked species responsible for a substantial part of the SiC/SiO2 interface states. |
| doi_str_mv | 10.1063/1.115611 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_115611</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_115611</sourcerecordid><originalsourceid>FETCH-LOGICAL-c206t-74d7df27bd33cb40ca3665b2198a1d6ce67566b44848d10e598177d4f051b8f23</originalsourceid><addsrcrecordid>eNotkMtKxDAYRoMoWEfBR8jSTWfyN82lSynjBQZmUV2XXCXSaYYkiuPTq9TV4YPDtzgI3QJZA-F0A2sAxgHOUAVEiJoCyHNUEUJozTsGl-gq5_ffyRpKKzRsp3AIsyohzjh6PIR-M4R9g8NcXPLKOJyLKi5jfcLH5OJXsIv8MZWkPkOcXKnjd5wdNpNTc5jfrtGFV1N2N_9codeH7Uv_VO_2j8_9_a42DeGlFq0V1jdCW0qNbolRlHOmG-ikAsuN44JxrttWttICcayTIIRtPWGgpW_oCt0tvybFnJPz4zGFg0qnEcj4F2OEcYlBfwA0clEh</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-ozone cleaning</title><source>AIP Digital Archive</source><creator>Afanas’ev, V. V. ; Stesmans, A. ; Bassler, M. ; Pensl, G. ; Schulz, M. J. ; Harris, C. I.</creator><creatorcontrib>Afanas’ev, V. V. ; Stesmans, A. ; Bassler, M. ; Pensl, G. ; Schulz, M. J. ; Harris, C. I.</creatorcontrib><description>The preoxidation cleaning of silicon carbide surfaces (3C, 4H, 6H polytypes) by exposing them to ultraviolet radiation and oxygen is shown to produce a significant improvement in the electronic properties of SiC/SiO2 interfaces. It is found that this treatment results in a removal of defect species, otherwise present at the SiC surface after thermal oxidation of SiC. Carbon clusters are proposed as the attacked species responsible for a substantial part of the SiC/SiO2 interface states.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.115611</identifier><language>eng</language><ispartof>Applied physics letters, 1996-04, Vol.68 (15), p.2141-2143</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c206t-74d7df27bd33cb40ca3665b2198a1d6ce67566b44848d10e598177d4f051b8f23</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Afanas’ev, V. V.</creatorcontrib><creatorcontrib>Stesmans, A.</creatorcontrib><creatorcontrib>Bassler, M.</creatorcontrib><creatorcontrib>Pensl, G.</creatorcontrib><creatorcontrib>Schulz, M. J.</creatorcontrib><creatorcontrib>Harris, C. I.</creatorcontrib><title>Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-ozone cleaning</title><title>Applied physics letters</title><description>The preoxidation cleaning of silicon carbide surfaces (3C, 4H, 6H polytypes) by exposing them to ultraviolet radiation and oxygen is shown to produce a significant improvement in the electronic properties of SiC/SiO2 interfaces. It is found that this treatment results in a removal of defect species, otherwise present at the SiC surface after thermal oxidation of SiC. Carbon clusters are proposed as the attacked species responsible for a substantial part of the SiC/SiO2 interface states.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNotkMtKxDAYRoMoWEfBR8jSTWfyN82lSynjBQZmUV2XXCXSaYYkiuPTq9TV4YPDtzgI3QJZA-F0A2sAxgHOUAVEiJoCyHNUEUJozTsGl-gq5_ffyRpKKzRsp3AIsyohzjh6PIR-M4R9g8NcXPLKOJyLKi5jfcLH5OJXsIv8MZWkPkOcXKnjd5wdNpNTc5jfrtGFV1N2N_9codeH7Uv_VO_2j8_9_a42DeGlFq0V1jdCW0qNbolRlHOmG-ikAsuN44JxrttWttICcayTIIRtPWGgpW_oCt0tvybFnJPz4zGFg0qnEcj4F2OEcYlBfwA0clEh</recordid><startdate>19960408</startdate><enddate>19960408</enddate><creator>Afanas’ev, V. V.</creator><creator>Stesmans, A.</creator><creator>Bassler, M.</creator><creator>Pensl, G.</creator><creator>Schulz, M. J.</creator><creator>Harris, C. I.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19960408</creationdate><title>Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-ozone cleaning</title><author>Afanas’ev, V. V. ; Stesmans, A. ; Bassler, M. ; Pensl, G. ; Schulz, M. J. ; Harris, C. I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c206t-74d7df27bd33cb40ca3665b2198a1d6ce67566b44848d10e598177d4f051b8f23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Afanas’ev, V. V.</creatorcontrib><creatorcontrib>Stesmans, A.</creatorcontrib><creatorcontrib>Bassler, M.</creatorcontrib><creatorcontrib>Pensl, G.</creatorcontrib><creatorcontrib>Schulz, M. J.</creatorcontrib><creatorcontrib>Harris, C. I.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Afanas’ev, V. V.</au><au>Stesmans, A.</au><au>Bassler, M.</au><au>Pensl, G.</au><au>Schulz, M. J.</au><au>Harris, C. I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-ozone cleaning</atitle><jtitle>Applied physics letters</jtitle><date>1996-04-08</date><risdate>1996</risdate><volume>68</volume><issue>15</issue><spage>2141</spage><epage>2143</epage><pages>2141-2143</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The preoxidation cleaning of silicon carbide surfaces (3C, 4H, 6H polytypes) by exposing them to ultraviolet radiation and oxygen is shown to produce a significant improvement in the electronic properties of SiC/SiO2 interfaces. It is found that this treatment results in a removal of defect species, otherwise present at the SiC surface after thermal oxidation of SiC. Carbon clusters are proposed as the attacked species responsible for a substantial part of the SiC/SiO2 interface states.</abstract><doi>10.1063/1.115611</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1996-04, Vol.68 (15), p.2141-2143 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_115611 |
| source | AIP Digital Archive |
| title | Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-ozone cleaning |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T17%3A10%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Elimination%20of%20SiC/SiO2%20interface%20states%20by%20preoxidation%20ultraviolet-ozone%20cleaning&rft.jtitle=Applied%20physics%20letters&rft.au=Afanas%E2%80%99ev,%20V.%20V.&rft.date=1996-04-08&rft.volume=68&rft.issue=15&rft.spage=2141&rft.epage=2143&rft.pages=2141-2143&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.115611&rft_dat=%3Ccrossref%3E10_1063_1_115611%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |