AlGaN pn junctions
AlGaN pn homo- and heterojunctions were fabricated on silicon carbide substrates by metalorganic chemical vapor deposition. AlN concentration in AlGaN layers ranged from 2 to 8 mol %. Mesa structures were made by reactive ion etching. Electroluminescence (EL) from AlGaN pn junctions was studied. EL...
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| Veröffentlicht in: | Applied physics letters 1995-07, Vol.67 (1), p.115-117 |
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| container_title | Applied physics letters |
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| creator | Dmitriev, V. A. Irvine, K. Carter, C. H. Zubrilov, A. S. Tsvetkov, D. V. |
| description | AlGaN pn homo- and heterojunctions were fabricated on silicon carbide substrates by metalorganic chemical vapor deposition. AlN concentration in AlGaN layers ranged from 2 to 8 mol %. Mesa structures were made by reactive ion etching. Electroluminescence (EL) from AlGaN pn junctions was studied. EL peaks associated with near band-to-band transition in AlGaN were detected. The minimum wavelength of EL peak of ∼348 nm (hν∼3.56 eV, 300 K) was measured for a p-Al0.08GaN0.92/n-Al0.06Ga0.94N heterojunction. The dependence of the photon energy of the edge EL peak on AlN concentration in AlGaN was measured. |
| doi_str_mv | 10.1063/1.115501 |
| format | Article |
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A. ; Irvine, K. ; Carter, C. H. ; Zubrilov, A. S. ; Tsvetkov, D. V.</creatorcontrib><description>AlGaN pn homo- and heterojunctions were fabricated on silicon carbide substrates by metalorganic chemical vapor deposition. AlN concentration in AlGaN layers ranged from 2 to 8 mol %. Mesa structures were made by reactive ion etching. Electroluminescence (EL) from AlGaN pn junctions was studied. EL peaks associated with near band-to-band transition in AlGaN were detected. The minimum wavelength of EL peak of ∼348 nm (hν∼3.56 eV, 300 K) was measured for a p-Al0.08GaN0.92/n-Al0.06Ga0.94N heterojunction. The dependence of the photon energy of the edge EL peak on AlN concentration in AlGaN was measured.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.115501</identifier><language>eng</language><ispartof>Applied physics letters, 1995-07, Vol.67 (1), p.115-117</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c225t-94e0ff2f3217f089e63e2ba8d20a6204a460b995a894e74dd500fc1262a5d5313</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27906,27907</link.rule.ids></links><search><creatorcontrib>Dmitriev, V. A.</creatorcontrib><creatorcontrib>Irvine, K.</creatorcontrib><creatorcontrib>Carter, C. H.</creatorcontrib><creatorcontrib>Zubrilov, A. S.</creatorcontrib><creatorcontrib>Tsvetkov, D. V.</creatorcontrib><title>AlGaN pn junctions</title><title>Applied physics letters</title><description>AlGaN pn homo- and heterojunctions were fabricated on silicon carbide substrates by metalorganic chemical vapor deposition. AlN concentration in AlGaN layers ranged from 2 to 8 mol %. Mesa structures were made by reactive ion etching. Electroluminescence (EL) from AlGaN pn junctions was studied. EL peaks associated with near band-to-band transition in AlGaN were detected. The minimum wavelength of EL peak of ∼348 nm (hν∼3.56 eV, 300 K) was measured for a p-Al0.08GaN0.92/n-Al0.06Ga0.94N heterojunction. 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V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c225t-94e0ff2f3217f089e63e2ba8d20a6204a460b995a894e74dd500fc1262a5d5313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dmitriev, V. A.</creatorcontrib><creatorcontrib>Irvine, K.</creatorcontrib><creatorcontrib>Carter, C. H.</creatorcontrib><creatorcontrib>Zubrilov, A. S.</creatorcontrib><creatorcontrib>Tsvetkov, D. V.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dmitriev, V. A.</au><au>Irvine, K.</au><au>Carter, C. H.</au><au>Zubrilov, A. S.</au><au>Tsvetkov, D. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>AlGaN pn junctions</atitle><jtitle>Applied physics letters</jtitle><date>1995-07-03</date><risdate>1995</risdate><volume>67</volume><issue>1</issue><spage>115</spage><epage>117</epage><pages>115-117</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>AlGaN pn homo- and heterojunctions were fabricated on silicon carbide substrates by metalorganic chemical vapor deposition. AlN concentration in AlGaN layers ranged from 2 to 8 mol %. Mesa structures were made by reactive ion etching. Electroluminescence (EL) from AlGaN pn junctions was studied. EL peaks associated with near band-to-band transition in AlGaN were detected. The minimum wavelength of EL peak of ∼348 nm (hν∼3.56 eV, 300 K) was measured for a p-Al0.08GaN0.92/n-Al0.06Ga0.94N heterojunction. The dependence of the photon energy of the edge EL peak on AlN concentration in AlGaN was measured.</abstract><doi>10.1063/1.115501</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1995-07, Vol.67 (1), p.115-117 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_115501 |
| source | AIP Digital Archive |
| title | AlGaN pn junctions |
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