Interface state buildup by high-field stressing in various metal-oxide-semiconductor insulators using deep level transient spectroscopy

The buildup of interface states with high field (HF) stressing have been observed in thermally grown oxide, N2O nitrided oxide (NO), and reoxided nitrided oxide (RNO). The DLTS technique was used to analyze the electronic properties of the Si/SiO2 interface. We show that N2O nitridation of SiO2 chan...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 1995-07, Vol.67 (4), p.530-532
Hauptverfasser:	Belkouch, S., Jean, C., Aktik, C., Ameziane, E. L.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!