Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy

Structural investigations of organometallic vapor phase epitaxy grown α-GaN films using high-resolution transmission electron microscopy and scanning force microscopy have revealed the presence of tunnel-like defects with 35–500 Å radii that are aligned along the growth direction of the crystal and...

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Veröffentlicht in:	Applied physics letters 1995-10, Vol.67 (16), p.2284-2286
Hauptverfasser:	Qian, W., Rohrer, G. S., Skowronski, M., Doverspike, K., Rowland, L. B., Gaskill, D. K.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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