Electron velocity overshoot in a GaAs-based p - i - n nanostructure semiconductor observed by transient subpicosecond Raman spectroscopy

Electron velocity overshoot in a GaAs-based p - i - n nanostructure semiconductor observed by transient subpicosecond Raman spectroscopy

We report direct measurements of nonequilibrium electron distributions and electron drift velocities in a GaAs-based p-i-n nanostructure semiconductor by using transient subpicosecond Raman spectroscopy. Experimental conditions are such that the velocity overshoot phenomenon dominates the transport...

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Veröffentlicht in:Applied physics letters 1995-09, Vol.67 (12), p.1760-1762
Hauptverfasser: Grann, E. D., Tsen, K. T., Sankey, O. F., Ferry, D. K., Salvador, A., Botcharev, A., Morkoç, H.
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container_end_page 1762
container_issue 12
container_start_page 1760
container_title Applied physics letters
container_volume 67
creator Grann, E. D.
Tsen, K. T.
Sankey, O. F.
Ferry, D. K.
Salvador, A.
Botcharev, A.
Morkoç, H.
description We report direct measurements of nonequilibrium electron distributions and electron drift velocities in a GaAs-based p-i-n nanostructure semiconductor by using transient subpicosecond Raman spectroscopy. Experimental conditions are such that the velocity overshoot phenomenon dominates the transport properties of the photoexcited carriers. These experimental results are compared with ensemble Monte Carlo calculations.
doi_str_mv 10.1063/1.115041
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title Electron velocity overshoot in a GaAs-based p - i - n nanostructure semiconductor observed by transient subpicosecond Raman spectroscopy
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