Damage threshold for ion-beam induced graphitization of diamond

The critical dose for graphitization of diamond as a result of ion implantation induced damage (boron and arsenic) and subsequent thermal annealing is determined by combining secondary ion mass spectroscopy measurements, chemical etching of the graphitized layer, and TRIM simulations. Li ions are im...

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Veröffentlicht in:	Applied physics letters 1995-08, Vol.67 (9), p.1194-1196
Hauptverfasser:	Uzan-Saguy, C., Cytermann, C., Brener, R., Richter, V., Shaanan, M., Kalish, R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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