Damage threshold for ion-beam induced graphitization of diamond

Damage threshold for ion-beam induced graphitization of diamond

The critical dose for graphitization of diamond as a result of ion implantation induced damage (boron and arsenic) and subsequent thermal annealing is determined by combining secondary ion mass spectroscopy measurements, chemical etching of the graphitized layer, and TRIM simulations. Li ions are im...

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Veröffentlicht in:Applied physics letters 1995-08, Vol.67 (9), p.1194-1196
Hauptverfasser: Uzan-Saguy, C., Cytermann, C., Brener, R., Richter, V., Shaanan, M., Kalish, R.
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container_end_page 1196
container_issue 9
container_start_page 1194
container_title Applied physics letters
container_volume 67
creator Uzan-Saguy, C.
Cytermann, C.
Brener, R.
Richter, V.
Shaanan, M.
Kalish, R.
description The critical dose for graphitization of diamond as a result of ion implantation induced damage (boron and arsenic) and subsequent thermal annealing is determined by combining secondary ion mass spectroscopy measurements, chemical etching of the graphitized layer, and TRIM simulations. Li ions are implanted as a deep marker to accurately determine the position of the graphite/diamond interface. The damage density threshold, beyond which graphitization occurs upon annealing, is found to be 1022 vacancies/cm3. This value is checked against published data and is shown to be of general nature, independent of ion species or implantation energy.
doi_str_mv 10.1063/1.115004
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title Damage threshold for ion-beam induced graphitization of diamond
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