Characteristics of a two-component chemically-assisted ion-beam etching technique for dry-etching of high-speed multiple quantum well laser mirrors

Characteristics of a two-component chemically-assisted ion-beam etching technique for dry-etching of high-speed multiple quantum well laser mirrors

We have developed a two-component chemically-assisted ion-beam etching (CAIBE) technique for dry-etching of high-speed multiple quantum well (MQW) laser mirrors. This two-component process relaxes several constraints in the dry-etching of Al containing opto-electronic device structures with Cl2 alon...

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Veröffentlicht in:Applied physics letters 1995-08, Vol.67 (7), p.927-929
Hauptverfasser: Sah, R. E., Ralston, J. D., Weisser, S., Eisele, K.
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container_issue 7
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container_title Applied physics letters
container_volume 67
creator Sah, R. E.
Ralston, J. D.
Weisser, S.
Eisele, K.
description We have developed a two-component chemically-assisted ion-beam etching (CAIBE) technique for dry-etching of high-speed multiple quantum well (MQW) laser mirrors. This two-component process relaxes several constraints in the dry-etching of Al containing opto-electronic device structures with Cl2 alone. The strained 3×100 μm2 In0.35Ga0.65As/GaAs undoped and p-doped 4-QW ridge waveguide lasers containing GaAs/AlAs binary short-period superlattice cladding layers with cavities fabricated by this CAIBE technique demonstrate record direct modulation bandwidths of 24 GHz (Ibias=25 mA) and 33 GHz (Ibias=65 mA), respectively.
doi_str_mv 10.1063/1.114697
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title Characteristics of a two-component chemically-assisted ion-beam etching technique for dry-etching of high-speed multiple quantum well laser mirrors
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