Growth of germanium-carbon alloys on silicon substrates by molecular beam epitaxy

Metastable Ge1−yCy alloys were grown by molecular beam epitaxy as homogeneous solid solutions having a diamond lattice structure. The substrates were (100) oriented Si wafers and the growth temperature was 600 °C. We report on measurements of the composition, structure, lattice constant, and optical...

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Veröffentlicht in:	Applied physics letters 1995-09, Vol.67 (13), p.1865-1867
Hauptverfasser:	Kolodzey, J., O’Neil, P. A., Zhang, S., Orner, B. A., Roe, K., Unruh, K. M., Swann, C. P., Waite, M. M., Shah, S. Ismat
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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