Enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As asymmetric double quantum wells

Enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As asymmetric double quantum wells

We report enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As asymmetric double quantum wells (ADQWs) by the use of real space electron transfer. The electron concentration in both the wide and narrow wells is investigated by field dependent absorption and photoluminescence spectrosc...

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Veröffentlicht in:Applied physics letters 1995-05, Vol.66 (22), p.3045-3047
Hauptverfasser: Krol, M. F., Leavitt, R. P., Pham, J. T., McGinnis, B. P., Peyghambarian, N.
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container_end_page 3047
container_issue 22
container_start_page 3045
container_title Applied physics letters
container_volume 66
creator Krol, M. F.
Leavitt, R. P.
Pham, J. T.
McGinnis, B. P.
Peyghambarian, N.
description We report enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As asymmetric double quantum wells (ADQWs) by the use of real space electron transfer. The electron concentration in both the wide and narrow wells is investigated by field dependent absorption and photoluminescence spectroscopy. The results are compared to absorption changes in an undoped ADQW structure that utilizes the quantum confined stark effect. The doped modulator exhibits a significantly larger red shift with applied field than the undoped structure.
doi_str_mv 10.1063/1.114272
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title Enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As asymmetric double quantum wells
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