Se chemical passivation and annealing treatment for GaAs Schottky diode

Se chemical passivation and annealing treatment for GaAs Schottky diode

A Se chemical passivation [(NH4)2S+Se] for GaAs Schottky diodes is presented. We have found that our (NH4)2S+Se passivated Schottky diodes have more than one order of magnitude higher forward current density than the (NH4)2Sx passivated ones. In rapid thermal annealing treatment, an initial decrease...

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Veröffentlicht in:Applied physics letters 1995-04, Vol.66 (16), p.2125-2127
Hauptverfasser: Xu, Huaiqi, Belkouch, Saïd, Aktik, Cetin, Rasmussen, Wolfgang
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container_end_page 2127
container_issue 16
container_start_page 2125
container_title Applied physics letters
container_volume 66
creator Xu, Huaiqi
Belkouch, Saïd
Aktik, Cetin
Rasmussen, Wolfgang
description A Se chemical passivation [(NH4)2S+Se] for GaAs Schottky diodes is presented. We have found that our (NH4)2S+Se passivated Schottky diodes have more than one order of magnitude higher forward current density than the (NH4)2Sx passivated ones. In rapid thermal annealing treatment, an initial decrease and then increase of forward current density for (NH4)2Sx passivated diodes is observed. For the (NH4)2S+Se and (NH4)OH treated diodes, a steady decrease of Schottky barrier height with increased annealing temperature is observed. With or without annealing treatment, the (NH4)2S+Se passivated diodes have the lowest barrier height.
doi_str_mv 10.1063/1.113924
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title Se chemical passivation and annealing treatment for GaAs Schottky diode
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