Electrical characterization of Al x Ga1− x As grown by low-pressure organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor

The electrical properties of AlxGa1−xAs (0≤x≤0.44) grown by organometallic vapor phase epitaxy using trimethylamine alane as the Al precursor were investigated. High-quality AlGaAs Schottky barriers were fabricated and characterized by current–voltage, capacitance–voltage, and deep level transient s...

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Veröffentlicht in:	Applied physics letters 1995-01, Vol.66 (2), p.183-185
Hauptverfasser:	Paraskevopoulos, Nicholas G., McAfee, Sigrid R., Hobson, William S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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