Preparation of crystallographically aligned layers of silicon carbide by pulsed laser deposition of carbon onto Si wafers

It is demonstrated that SiC films can be deposited epitaxially on [001] and [111] Si wafers by excimer laser ablation of just a carbon target, in vacuum, at deposition temperatures as low as 1100 °C. Diffraction studies show that the SiC films have the same crystalline orientation as the substrates....

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Veröffentlicht in:	Applied physics letters 1994-10, Vol.65 (17), p.2171-2173
Hauptverfasser:	Rimai, L., Ager, R., Weber, W. H., Hangas, J., Poindexter, B. D.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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