Evolution of surface topography during metalorganic vapor phase epitaxy of InP/InGaAs/InP quantum well heterostructures

Evolution of surface topography during metalorganic vapor phase epitaxy of InP/InGaAs/InP quantum well heterostructures

The evolution of surface topography during epitaxial growth of lattice matched InP/InGaAs/InP on (100) InP substrate is observed using in situ elastic light scattering supported by ex situ atomic force microscopy. A topographically smooth growth transition from InP to InGaAs is observed. However, th...

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Veröffentlicht in:Applied physics letters 1994-10, Vol.65 (15), p.1949-1951
Hauptverfasser: Epler, J. E., Söchtig, J., Sigg, H. C.
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container_end_page 1951
container_issue 15
container_start_page 1949
container_title Applied physics letters
container_volume 65
creator Epler, J. E.
Söchtig, J.
Sigg, H. C.
description The evolution of surface topography during epitaxial growth of lattice matched InP/InGaAs/InP on (100) InP substrate is observed using in situ elastic light scattering supported by ex situ atomic force microscopy. A topographically smooth growth transition from InP to InGaAs is observed. However, the InP-on-InGaAs interface exhibits three-dimensional nucleation followed by planarization and two-dimensional epitaxy. The three-dimensional phase is a result of the high surface energy of InP relative to InGaAs. A growth pause after the InGaAs QW increases the transient roughness of the InP surface and increases the thickness of InP required for planarization.
doi_str_mv 10.1063/1.112826
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title Evolution of surface topography during metalorganic vapor phase epitaxy of InP/InGaAs/InP quantum well heterostructures
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