Comparison of ultrathin SiO2 films grown by thermal oxidation in an N2O ambient with those in a 33% O2/N2 ambient

An N2O ambient allowed the oxidation rate to be substantially low while forming an oxynitride layer at the early stage of oxidation, and also provided nitrogen atoms to the oxide film during further oxidation. Both the formation of an oxynitride layer in the interface of SiO2 and Si substrate and a...

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Veröffentlicht in:	Applied physics letters 1994-11, Vol.65 (19), p.2448-2450
Hauptverfasser:	Bong Kang, Sug, Kim, Sun-Oo, Byun, Jeong-Soo, Kim, Hyeong Joon
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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