Photopumped room-temperature edge- and vertical-cavity operation of AlGaAs-GaAs-InGaAs quantum-well heterostructure lasers utilizing native oxide mirrors

Data are presented on the 300-K continuous and pulsed photopumped laser operation of AlyGa1−yAs-GaAs-InxGa1−xAs quantum-well heterostructure (QWH) crystals that utilize large-index-step high-contrast distributed Bragg reflector mirrors. The mirrors are formed by selective lateral oxidation (H2O+N2,...

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Veröffentlicht in:Applied physics letters 1994-08, Vol.65 (6), p.740-742
Hauptverfasser: Ries, M. J., Richard, T. A., Maranowski, S. A., Holonyak, N., Chen, E. I.
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container_title Applied physics letters
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creator Ries, M. J.
Richard, T. A.
Maranowski, S. A.
Holonyak, N.
Chen, E. I.
description Data are presented on the 300-K continuous and pulsed photopumped laser operation of AlyGa1−yAs-GaAs-InxGa1−xAs quantum-well heterostructure (QWH) crystals that utilize large-index-step high-contrast distributed Bragg reflector mirrors. The mirrors are formed by selective lateral oxidation (H2O+N2, 425 °C) of three lower and three upper AlAs layers in the structure, resulting in enhanced cavity Q in the vertical direction. The laterally oxidized mirrors, a small lower and an upper ‘‘stack’’ that sandwich a lateral waveguide and double QW active region, are of sufficient quality to permit vertical-cavity laser operation of the QWH crystals.
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title Photopumped room-temperature edge- and vertical-cavity operation of AlGaAs-GaAs-InGaAs quantum-well heterostructure lasers utilizing native oxide mirrors
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