Doping of ZnTe by molecular beam epitaxy

Doping of ZnTe by molecular beam epitaxy

We have grown Cl-doped ZnTe under different growth conditions and N-doped ZnTe on different orientations. n-type doping was achieved for the first time by proper control of the Zn/Te beam flux. A p-type doping level of 1×1020 cm−3, which is the highest reported, was obtained by substrate tilting. Th...

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Veröffentlicht in:Applied physics letters 1994-04, Vol.64 (14), p.1848-1849
Hauptverfasser: Tao, I. W., Jurkovic, M., Wang, W. I.
Format: Artikel
Sprache:eng
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Zusammenfassung:We have grown Cl-doped ZnTe under different growth conditions and N-doped ZnTe on different orientations. n-type doping was achieved for the first time by proper control of the Zn/Te beam flux. A p-type doping level of 1×1020 cm−3, which is the highest reported, was obtained by substrate tilting. These phenomena can be analyzed by the surface bonding structure analogous to the impurity concentration in the III-V compound semiconductors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.111775