2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers

Lasing has been obtained in the wavelength range 2.7–3.9 μm in double heterostructure diode lasers with an active region made of InAs alloys. The devices were grown by liquid-phase epitaxy. Typical values of threshold current at 80 K were as low as 40 mA and the maximum operating temperature was 180...

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Veröffentlicht in:	Applied physics letters 1994-05, Vol.64 (19), p.2480-2482
Hauptverfasser:	Baranov, A. N., Imenkov, A. N., Sherstnev, V. V., Yakovlev, Yu. P.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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