2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers
Lasing has been obtained in the wavelength range 2.7–3.9 μm in double heterostructure diode lasers with an active region made of InAs alloys. The devices were grown by liquid-phase epitaxy. Typical values of threshold current at 80 K were as low as 40 mA and the maximum operating temperature was 180...
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| Veröffentlicht in: | Applied physics letters 1994-05, Vol.64 (19), p.2480-2482 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Lasing has been obtained in the wavelength range 2.7–3.9 μm in double heterostructure diode lasers with an active region made of InAs alloys. The devices were grown by liquid-phase epitaxy. Typical values of threshold current at 80 K were as low as 40 mA and the maximum operating temperature was 180 K. The blue shift of lasing modes was observed with current. This was explained by the increase of the carrier density in the active region above threshold due to intervalence band absorption. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.111603 |