Pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane: Characterization and a new two-step writing process

We describe pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane with 514-nm radiation from an Ar ion laser. High purity Al lines with resistivity close to bulk Al are reported for a range of operating conditions. The relationship between operating parameters and ma...

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Veröffentlicht in:Applied physics letters 1994-01, Vol.64 (4), p.425-427
Hauptverfasser: Han, Jaesung, Jensen, Klavs F., Senzaki, Yoshihide, Gladfelter, Wayne L.
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container_issue 4
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container_title Applied physics letters
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creator Han, Jaesung
Jensen, Klavs F.
Senzaki, Yoshihide
Gladfelter, Wayne L.
description We describe pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane with 514-nm radiation from an Ar ion laser. High purity Al lines with resistivity close to bulk Al are reported for a range of operating conditions. The relationship between operating parameters and materials properties of the deposited lines is delineated. Results from deposition on different substrates, Pt, Au, W, and Si, provide insight into thermal and nucleation effects in the laser writing process. Based on the observed nucleation behavior, we demonstrate a two-step fast writing process involving fast laser nucleation of lines, followed by selective chemical vapor deposition of Al on the nucleated pattern.
doi_str_mv 10.1063/1.111119
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title Pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane: Characterization and a new two-step writing process
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