Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators

We report the electroabsorption property of InAsP/InP strained multiple quantum wells (MQWs), grown by gas-source molecular beam epitaxy, for 1.3 μm modulator applications. Very sharp excitonic absorption at room temperature was observed. Electroabsorption measurements performed for a ring-shaped p-...

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Veröffentlicht in:	Applied physics letters 1993-09, Vol.63 (13), p.1833-1835
Hauptverfasser:	HOU, H. Q, CHENG, A. N, WIEDER, H. H, CHANG, W. S. C, TU, C. W
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electrooptical effects Exact sciences and technology Iii-v and ii-vi semiconductors Iii-v semiconductors Infrared and raman spectra and scattering Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Optical properties of specific thin films Physics
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