Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators
We report the electroabsorption property of InAsP/InP strained multiple quantum wells (MQWs), grown by gas-source molecular beam epitaxy, for 1.3 μm modulator applications. Very sharp excitonic absorption at room temperature was observed. Electroabsorption measurements performed for a ring-shaped p-...
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| Veröffentlicht in: | Applied physics letters 1993-09, Vol.63 (13), p.1833-1835 |
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| container_end_page | 1835 |
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| container_issue | 13 |
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| container_title | Applied physics letters |
| container_volume | 63 |
| creator | HOU, H. Q CHENG, A. N WIEDER, H. H CHANG, W. S. C TU, C. W |
| description | We report the electroabsorption property of InAsP/InP strained multiple quantum wells (MQWs), grown by gas-source molecular beam epitaxy, for 1.3 μm modulator applications. Very sharp excitonic absorption at room temperature was observed. Electroabsorption measurements performed for a ring-shaped p-i-n diode, consisting of 10-period InAs0.41P0.59(100 Å)/InP(150 Å) strained MQWs, reveal a significant red shift of the absorption peak with increasing reverse biases due to the quantum-confined Stark effect. This large energy shift (e.g., ∼18 meV at an external field of 57 kV/cm) is well accounted for in the ‘‘effective well-width’’ model. The change of the absorption coefficient at a 22 meV detuning is as large as 3510 cm−1 with a small residual absorption, which can be very useful for 1.3 μm waveguide modulators. |
| doi_str_mv | 10.1063/1.110806 |
| format | Article |
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Q ; CHENG, A. N ; WIEDER, H. H ; CHANG, W. S. C ; TU, C. W</creator><creatorcontrib>HOU, H. Q ; CHENG, A. N ; WIEDER, H. H ; CHANG, W. S. C ; TU, C. W</creatorcontrib><description>We report the electroabsorption property of InAsP/InP strained multiple quantum wells (MQWs), grown by gas-source molecular beam epitaxy, for 1.3 μm modulator applications. Very sharp excitonic absorption at room temperature was observed. Electroabsorption measurements performed for a ring-shaped p-i-n diode, consisting of 10-period InAs0.41P0.59(100 Å)/InP(150 Å) strained MQWs, reveal a significant red shift of the absorption peak with increasing reverse biases due to the quantum-confined Stark effect. This large energy shift (e.g., ∼18 meV at an external field of 57 kV/cm) is well accounted for in the ‘‘effective well-width’’ model. The change of the absorption coefficient at a 22 meV detuning is as large as 3510 cm−1 with a small residual absorption, which can be very useful for 1.3 μm waveguide modulators.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.110806</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electrooptical effects ; Exact sciences and technology ; Iii-v and ii-vi semiconductors ; Iii-v semiconductors ; Infrared and raman spectra and scattering ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Optical properties of specific thin films ; Physics</subject><ispartof>Applied physics letters, 1993-09, Vol.63 (13), p.1833-1835</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c169t-d67b3d54a735f8fa720aed3c3c4651305ae37e2f2839916d77e0b3be979e4d293</citedby><cites>FETCH-LOGICAL-c169t-d67b3d54a735f8fa720aed3c3c4651305ae37e2f2839916d77e0b3be979e4d293</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3786647$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>HOU, H. Q</creatorcontrib><creatorcontrib>CHENG, A. N</creatorcontrib><creatorcontrib>WIEDER, H. H</creatorcontrib><creatorcontrib>CHANG, W. S. C</creatorcontrib><creatorcontrib>TU, C. W</creatorcontrib><title>Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators</title><title>Applied physics letters</title><description>We report the electroabsorption property of InAsP/InP strained multiple quantum wells (MQWs), grown by gas-source molecular beam epitaxy, for 1.3 μm modulator applications. Very sharp excitonic absorption at room temperature was observed. Electroabsorption measurements performed for a ring-shaped p-i-n diode, consisting of 10-period InAs0.41P0.59(100 Å)/InP(150 Å) strained MQWs, reveal a significant red shift of the absorption peak with increasing reverse biases due to the quantum-confined Stark effect. This large energy shift (e.g., ∼18 meV at an external field of 57 kV/cm) is well accounted for in the ‘‘effective well-width’’ model. The change of the absorption coefficient at a 22 meV detuning is as large as 3510 cm−1 with a small residual absorption, which can be very useful for 1.3 μm waveguide modulators.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electrooptical effects</subject><subject>Exact sciences and technology</subject><subject>Iii-v and ii-vi semiconductors</subject><subject>Iii-v semiconductors</subject><subject>Infrared and raman spectra and scattering</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Optical properties of specific thin films</subject><subject>Physics</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kM1KxDAUhYMoOI6Cj5CFCzedye1tk3Y5DKMODDgLXZc0P1JJm5qkiu_mM_hMjoy4OpzDx1l8hFwDWwDjuIQFAKsYPyEzYEJkCFCdkhljDDNel3BOLmJ8PdQyR5yRZuOMSsHLNvowps4P1Fu6HVZxv9wOexpTkN1gNO0nl7rRGfo2ySFNPf0wzkVqfaCwQPr9dVjku3mZOm1o7_XkZPIhXpIzK100V385J893m6f1Q7Z7vN-uV7tMAa9TprloUZeFFFjaykqRM2k0KlQFLwFZKQ0Kk9u8wroGroUwrMXW1KI2hc5rnJPb468KPsZgbDOGrpfhswHW_IppoDmKOaA3R3SUUUlngxxUF_95FBXnhcAfXm5i7w</recordid><startdate>19930927</startdate><enddate>19930927</enddate><creator>HOU, H. 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Q</creatorcontrib><creatorcontrib>CHENG, A. N</creatorcontrib><creatorcontrib>WIEDER, H. H</creatorcontrib><creatorcontrib>CHANG, W. S. C</creatorcontrib><creatorcontrib>TU, C. W</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>HOU, H. Q</au><au>CHENG, A. N</au><au>WIEDER, H. H</au><au>CHANG, W. S. C</au><au>TU, C. W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators</atitle><jtitle>Applied physics letters</jtitle><date>1993-09-27</date><risdate>1993</risdate><volume>63</volume><issue>13</issue><spage>1833</spage><epage>1835</epage><pages>1833-1835</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report the electroabsorption property of InAsP/InP strained multiple quantum wells (MQWs), grown by gas-source molecular beam epitaxy, for 1.3 μm modulator applications. Very sharp excitonic absorption at room temperature was observed. Electroabsorption measurements performed for a ring-shaped p-i-n diode, consisting of 10-period InAs0.41P0.59(100 Å)/InP(150 Å) strained MQWs, reveal a significant red shift of the absorption peak with increasing reverse biases due to the quantum-confined Stark effect. This large energy shift (e.g., ∼18 meV at an external field of 57 kV/cm) is well accounted for in the ‘‘effective well-width’’ model. The change of the absorption coefficient at a 22 meV detuning is as large as 3510 cm−1 with a small residual absorption, which can be very useful for 1.3 μm waveguide modulators.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.110806</doi><tpages>3</tpages></addata></record> |
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| ispartof | Applied physics letters, 1993-09, Vol.63 (13), p.1833-1835 |
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| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electrooptical effects Exact sciences and technology Iii-v and ii-vi semiconductors Iii-v semiconductors Infrared and raman spectra and scattering Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Optical properties of specific thin films Physics |
| title | Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators |
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