Comment on ‘‘Effect of sub-band-gap illumination on β-FeSi2/ n -type Si diodes under reverse bias’’

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 1993-10, Vol.63 (15), p.2153-2153
Hauptverfasser:	Muret, P., Lefki, K.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	2153
container_issue	15
container_start_page	2153
container_title	Applied physics letters
container_volume	63
creator	Muret, P. Lefki, K.
description
doi_str_mv	10.1063/1.110570
format	Article
fullrecord	<record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_110570</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_110570</sourcerecordid><originalsourceid>FETCH-LOGICAL-c670-5c22bc4aa40b5615e303ca0b5fc15058c65c3726b0305c9b63ec916e76e0e2593</originalsourceid><addsrcrecordid>eNotkE9KAzEYxYMoWKvgEbJ0k_b7Jk2ms5TSqlBw0e6HJPONROYfSSt012PoNTyIh-hJjFT4wXsPHm_xGLtHmCBoOcUJIqgcLtgIIc-FRJxfshEASKELhdfsJsb3FFUm5Yg1i75tqdvxvuOn42diWdfkUq553FthTVeJNzNw3zT71ndm51Mz8fMtVrTx2ZR3XOwOA_GN55XvK4p831UUeKAPCpG49Saejl-JW3ZVmybS3b-O2Xa13C6exfr16WXxuBZO5yCUyzLrZsbMwCqNiiRIZ5KvHSpQc6eVk3mmLUhQrrBakitQU64JKFOFHLOH86wLfYyB6nIIvjXhUCKUfyeVWJ5Pkr9Pklwq</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Comment on ‘‘Effect of sub-band-gap illumination on β-FeSi2/ n -type Si diodes under reverse bias’’</title><source>AIP Digital Archive</source><creator>Muret, P. ; Lefki, K.</creator><creatorcontrib>Muret, P. ; Lefki, K.</creatorcontrib><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.110570</identifier><language>eng</language><ispartof>Applied physics letters, 1993-10, Vol.63 (15), p.2153-2153</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c670-5c22bc4aa40b5615e303ca0b5fc15058c65c3726b0305c9b63ec916e76e0e2593</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Muret, P.</creatorcontrib><creatorcontrib>Lefki, K.</creatorcontrib><title>Comment on ‘‘Effect of sub-band-gap illumination on β-FeSi2/ n -type Si diodes under reverse bias’’</title><title>Applied physics letters</title><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNotkE9KAzEYxYMoWKvgEbJ0k_b7Jk2ms5TSqlBw0e6HJPONROYfSSt012PoNTyIh-hJjFT4wXsPHm_xGLtHmCBoOcUJIqgcLtgIIc-FRJxfshEASKELhdfsJsb3FFUm5Yg1i75tqdvxvuOn42diWdfkUq553FthTVeJNzNw3zT71ndm51Mz8fMtVrTx2ZR3XOwOA_GN55XvK4p831UUeKAPCpG49Saejl-JW3ZVmybS3b-O2Xa13C6exfr16WXxuBZO5yCUyzLrZsbMwCqNiiRIZ5KvHSpQc6eVk3mmLUhQrrBakitQU64JKFOFHLOH86wLfYyB6nIIvjXhUCKUfyeVWJ5Pkr9Pklwq</recordid><startdate>19931011</startdate><enddate>19931011</enddate><creator>Muret, P.</creator><creator>Lefki, K.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19931011</creationdate><title>Comment on ‘‘Effect of sub-band-gap illumination on β-FeSi2/ n -type Si diodes under reverse bias’’</title><author>Muret, P. ; Lefki, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c670-5c22bc4aa40b5615e303ca0b5fc15058c65c3726b0305c9b63ec916e76e0e2593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Muret, P.</creatorcontrib><creatorcontrib>Lefki, K.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Muret, P.</au><au>Lefki, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comment on ‘‘Effect of sub-band-gap illumination on β-FeSi2/ n -type Si diodes under reverse bias’’</atitle><jtitle>Applied physics letters</jtitle><date>1993-10-11</date><risdate>1993</risdate><volume>63</volume><issue>15</issue><spage>2153</spage><epage>2153</epage><pages>2153-2153</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><doi>10.1063/1.110570</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record>
fulltext	fulltext
identifier	ISSN: 0003-6951
ispartof	Applied physics letters, 1993-10, Vol.63 (15), p.2153-2153
issn	0003-6951 1077-3118
language	eng
recordid	cdi_crossref_primary_10_1063_1_110570
source	AIP Digital Archive
title	Comment on ‘‘Effect of sub-band-gap illumination on β-FeSi2/ n -type Si diodes under reverse bias’’
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T13%3A24%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Comment%20on%20%E2%80%98%E2%80%98Effect%20of%20sub-band-gap%20illumination%20on%20%CE%B2-FeSi2/%20n%20-type%20Si%20diodes%20under%20reverse%20bias%E2%80%99%E2%80%99&rft.jtitle=Applied%20physics%20letters&rft.au=Muret,%20P.&rft.date=1993-10-11&rft.volume=63&rft.issue=15&rft.spage=2153&rft.epage=2153&rft.pages=2153-2153&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.110570&rft_dat=%3Ccrossref%3E10_1063_1_110570%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true