Strained quaternary quantum well lasers for high temperature operation

Strained quaternary quantum well lasers for high temperature operation

We describe compressively strained separate confinement heterostructure 1.3 μm quantum well lasers optimized for high temperature operation. The active layer consists of ten GaInAsP wells, each 40–80 Å thick, grown under compressive lattice mismatch strain of Δa/a≤0.75%. Within the constraints of th...

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Veröffentlicht in:Applied physics letters 1993-10, Vol.63 (17), p.2321-2323
Hauptverfasser: TEMKIN, H, COBLENTZ, D, LOGAN, R. A, VANDERBERG, J. M, YADVISH, R. D, SERGENT, A. M
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Sprache:eng
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Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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container_end_page 2323
container_issue 17
container_start_page 2321
container_title Applied physics letters
container_volume 63
creator TEMKIN, H
COBLENTZ, D
LOGAN, R. A
VANDERBERG, J. M
YADVISH, R. D
SERGENT, A. M
description We describe compressively strained separate confinement heterostructure 1.3 μm quantum well lasers optimized for high temperature operation. The active layer consists of ten GaInAsP wells, each 40–80 Å thick, grown under compressive lattice mismatch strain of Δa/a≤0.75%. Within the constraints of the well composition and thickness imposed on the active region, strain is necessary for efficient laser operation. Best results are obtained for Δa/a∼0.2%–0.3% with the laser threshold as low as 5 mA and slope efficiency of 42 mW/mA. In the temperature range of 25–85 °C a slope efficiency change as small as 30% was achieved. Power output of at least 20 mW can be maintained up to 100 °C at a current drive below 150 mA.
doi_str_mv 10.1063/1.110513
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subjects Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
title Strained quaternary quantum well lasers for high temperature operation
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