Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere
Ge segregation at SiGe/Si heterointerfaces has been studied for films deposited by atmospheric pressure chemical vapor deposition (APCVD), ultrahigh vacuum CVD (UHV/CVD) and molecular beam epitaxy (MBE). Profiles were taken by secondary-ion-mass-spectroscopy (SIMS) of samples grown with these techni...
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| Veröffentlicht in: | Applied physics letters 1993-11, Vol.63 (18), p.2531-2533 |
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| container_end_page | 2533 |
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| container_issue | 18 |
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| container_title | Applied physics letters |
| container_volume | 63 |
| creator | GRÜTZMACHER, D. A SEDGWICK, T. O POWELL, A TEJWANI, M IYER, S. S COTTE, J CARDONE, F |
| description | Ge segregation at SiGe/Si heterointerfaces has been studied for films deposited by atmospheric pressure chemical vapor deposition (APCVD), ultrahigh vacuum CVD (UHV/CVD) and molecular beam epitaxy (MBE). Profiles were taken by secondary-ion-mass-spectroscopy (SIMS) of samples grown with these techniques at the same growth temperatures and Ge concentrations. The MBE grown profiles are dominated by segregation of Ge into the Si top layer in the temperature range from 450 to 800 °C. SiGe/Si interfaces deposited by UHV/CVD at elevated temperatures are smeared, but at 515 °C and below the interfaces are abrupt within the resolution of the SIMS. Heterostructures grown by APCVD show abrupt interfaces and no indication of Ge segregation in the investigated temperature range from 600 to 800 °C. Surface passivation by hydrogen appears to be responsible for the suppression of the Ge segregation in CVD processes. |
| doi_str_mv | 10.1063/1.110449 |
| format | Article |
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A ; SEDGWICK, T. O ; POWELL, A ; TEJWANI, M ; IYER, S. S ; COTTE, J ; CARDONE, F</creator><creatorcontrib>GRÜTZMACHER, D. A ; SEDGWICK, T. O ; POWELL, A ; TEJWANI, M ; IYER, S. S ; COTTE, J ; CARDONE, F</creatorcontrib><description>Ge segregation at SiGe/Si heterointerfaces has been studied for films deposited by atmospheric pressure chemical vapor deposition (APCVD), ultrahigh vacuum CVD (UHV/CVD) and molecular beam epitaxy (MBE). Profiles were taken by secondary-ion-mass-spectroscopy (SIMS) of samples grown with these techniques at the same growth temperatures and Ge concentrations. The MBE grown profiles are dominated by segregation of Ge into the Si top layer in the temperature range from 450 to 800 °C. SiGe/Si interfaces deposited by UHV/CVD at elevated temperatures are smeared, but at 515 °C and below the interfaces are abrupt within the resolution of the SIMS. Heterostructures grown by APCVD show abrupt interfaces and no indication of Ge segregation in the investigated temperature range from 600 to 800 °C. Surface passivation by hydrogen appears to be responsible for the suppression of the Ge segregation in CVD processes.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.110449</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Diffusion; interface formation ; Exact sciences and technology ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Molecular, atomic, ion, and chemical beam epitaxy ; Physics ; Solid surfaces and solid-solid interfaces ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Applied physics letters, 1993-11, Vol.63 (18), p.2531-2533</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c322t-ede7001cb5d8d78b72c31bc1cba2fc2f5ede0e1f01474aba70864546bde64cab3</citedby><cites>FETCH-LOGICAL-c322t-ede7001cb5d8d78b72c31bc1cba2fc2f5ede0e1f01474aba70864546bde64cab3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3831136$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>GRÜTZMACHER, D. A</creatorcontrib><creatorcontrib>SEDGWICK, T. O</creatorcontrib><creatorcontrib>POWELL, A</creatorcontrib><creatorcontrib>TEJWANI, M</creatorcontrib><creatorcontrib>IYER, S. S</creatorcontrib><creatorcontrib>COTTE, J</creatorcontrib><creatorcontrib>CARDONE, F</creatorcontrib><title>Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere</title><title>Applied physics letters</title><description>Ge segregation at SiGe/Si heterointerfaces has been studied for films deposited by atmospheric pressure chemical vapor deposition (APCVD), ultrahigh vacuum CVD (UHV/CVD) and molecular beam epitaxy (MBE). Profiles were taken by secondary-ion-mass-spectroscopy (SIMS) of samples grown with these techniques at the same growth temperatures and Ge concentrations. The MBE grown profiles are dominated by segregation of Ge into the Si top layer in the temperature range from 450 to 800 °C. SiGe/Si interfaces deposited by UHV/CVD at elevated temperatures are smeared, but at 515 °C and below the interfaces are abrupt within the resolution of the SIMS. Heterostructures grown by APCVD show abrupt interfaces and no indication of Ge segregation in the investigated temperature range from 600 to 800 °C. Surface passivation by hydrogen appears to be responsible for the suppression of the Ge segregation in CVD processes.</description><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Diffusion; interface formation</subject><subject>Exact sciences and technology</subject><subject>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Molecular, atomic, ion, and chemical beam epitaxy</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kMFKAzEQhoMoWKvgI-Tgwcu2mU12sz1K0SoUPFTPSzaZ7Ubb7JpkEd--sRVPwz98_zB8hNwCmwEr-RxmAEyIxRmZAJMy4wDVOZkwxnhWLgq4JFchfKRY5JxPyOcKacCtx62KtnfUOrqxK5xvLO0wou9D9KOOo8dAlTPUxkANDugMOo00NVLqgz2WI-rO2a8Rj-jW99-xoyru-zB06PGaXLRqF_Dmb07J-9Pj2_I5W7-uXpYP60zzPI8ZGpSMgW4KUxlZNTLXHBqdFipvdd4WCWAILQMhhWqUZFUpClE2BkuhVcOn5P50V6f3g8e2HrzdK_9TA6t_JdVQnyQl9O6EDipotWu9ctqGf55XSR8v-QFciGie</recordid><startdate>19931101</startdate><enddate>19931101</enddate><creator>GRÜTZMACHER, D. A</creator><creator>SEDGWICK, T. O</creator><creator>POWELL, A</creator><creator>TEJWANI, M</creator><creator>IYER, S. S</creator><creator>COTTE, J</creator><creator>CARDONE, F</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19931101</creationdate><title>Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere</title><author>GRÜTZMACHER, D. A ; SEDGWICK, T. O ; POWELL, A ; TEJWANI, M ; IYER, S. S ; COTTE, J ; CARDONE, F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c322t-ede7001cb5d8d78b72c31bc1cba2fc2f5ede0e1f01474aba70864546bde64cab3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Diffusion; interface formation</topic><topic>Exact sciences and technology</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Molecular, atomic, ion, and chemical beam epitaxy</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>GRÜTZMACHER, D. A</creatorcontrib><creatorcontrib>SEDGWICK, T. O</creatorcontrib><creatorcontrib>POWELL, A</creatorcontrib><creatorcontrib>TEJWANI, M</creatorcontrib><creatorcontrib>IYER, S. S</creatorcontrib><creatorcontrib>COTTE, J</creatorcontrib><creatorcontrib>CARDONE, F</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>GRÜTZMACHER, D. A</au><au>SEDGWICK, T. O</au><au>POWELL, A</au><au>TEJWANI, M</au><au>IYER, S. S</au><au>COTTE, J</au><au>CARDONE, F</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere</atitle><jtitle>Applied physics letters</jtitle><date>1993-11-01</date><risdate>1993</risdate><volume>63</volume><issue>18</issue><spage>2531</spage><epage>2533</epage><pages>2531-2533</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Ge segregation at SiGe/Si heterointerfaces has been studied for films deposited by atmospheric pressure chemical vapor deposition (APCVD), ultrahigh vacuum CVD (UHV/CVD) and molecular beam epitaxy (MBE). Profiles were taken by secondary-ion-mass-spectroscopy (SIMS) of samples grown with these techniques at the same growth temperatures and Ge concentrations. The MBE grown profiles are dominated by segregation of Ge into the Si top layer in the temperature range from 450 to 800 °C. SiGe/Si interfaces deposited by UHV/CVD at elevated temperatures are smeared, but at 515 °C and below the interfaces are abrupt within the resolution of the SIMS. Heterostructures grown by APCVD show abrupt interfaces and no indication of Ge segregation in the investigated temperature range from 600 to 800 °C. Surface passivation by hydrogen appears to be responsible for the suppression of the Ge segregation in CVD processes.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.110449</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1993-11, Vol.63 (18), p.2531-2533 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_110449 |
| source | AIP Digital Archive |
| subjects | Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Diffusion interface formation Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Solid surfaces and solid-solid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere |
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