Separate-confinement heterostructure dependence of the effective carrier recombination coefficient of strained InGaAs/InGaAsP multiple quantum well lasers

We experimentally investigated the separate-confinement heterostructure (SCH) layer thickness and SCH band-gap wavelength dependence of the effective carrier recombination coefficient of strained InGaAs/InGaAsP multiple quantum well lasers. The dependence is explained by the carrier transport betwee...

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Veröffentlicht in:	Applied physics letters 1993-11, Vol.63 (22), p.2996-2998
Hauptverfasser:	ODAGAWA, T, NAKAJIMA, K, TANAKA, K, NOBUHARA, H, INOUE, T, OKAZAKI, N, WAKAO, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes
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Zusammenfassung:	We experimentally investigated the separate-confinement heterostructure (SCH) layer thickness and SCH band-gap wavelength dependence of the effective carrier recombination coefficient of strained InGaAs/InGaAsP multiple quantum well lasers. The dependence is explained by the carrier transport between the SCH layers and the wells.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.110263