Dependence of InAs phonon energy on misfit-induced strain

The transverse-optical (TO) phonon energy in strained InAs quantum wells has been investigated by using far-infrared absorption. We observe that the TO phonon energy decreases when the misfit-induced biaxial tension in the InAs single quantum well is increased. Our result shows a stronger phonon ene...

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Veröffentlicht in:	Applied physics letters 1993-12, Vol.63 (25), p.3434-3436
Hauptverfasser:	YANG, M. J, WAGNER, R. J, SHANABROOK, B. V, MOORE, W. J, WATERMAN, J. R, YANG, C. H, FATEMI, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Lattice dynamics Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Phonon states and bands, normal modes, and phonon dispersion Phonons and vibrations in crystal lattices Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Zusammenfassung:	The transverse-optical (TO) phonon energy in strained InAs quantum wells has been investigated by using far-infrared absorption. We observe that the TO phonon energy decreases when the misfit-induced biaxial tension in the InAs single quantum well is increased. Our result shows a stronger phonon energy dependence on the strain than the one reported by Cerdeira et al. [Phys. Rev. B 5, 580 (1972)]. The discrepancy may be explained by stress relaxation near the surface in their experiment. The application of our result will be discussed.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.110137