Surface recombination velocities on processed InGaP p-n junctions
InGaP p-n junction mesa diodes were fabricated by wet or dry etching, and the surface recombination velocities (Sv) measured from the size dependence of the current density-voltage characteristics. Within experimental error, the dry etching does not increase the S values, which are in the range 4.4–...
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| Veröffentlicht in: | Applied physics letters 1993-12, Vol.63 (26), p.3610-3612 |
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| container_end_page | 3612 |
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| container_issue | 26 |
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| container_title | Applied physics letters |
| container_volume | 63 |
| creator | PEARTON, S. J REN, F HOBSON, W. S ABERNATHY, C. R MASAITIS, R. L CHAKRABARTI, U. K |
| description | InGaP p-n junction mesa diodes were fabricated by wet or dry etching, and the surface recombination velocities (Sv) measured from the size dependence of the current density-voltage characteristics. Within experimental error, the dry etching does not increase the S values, which are in the range 4.4–5.2×104 cm s−1. Subsequent low temperature annealing or plasma exposure did not degrade the surface properties of the mesa diodes, and some improvement was observed with (NH4)2Sx treatment. While the InGaP diodes are relatively insensitive to typical processing steps, comparable AlGaAs p-n junction show much larger changes in surface recombination velocities. |
| doi_str_mv | 10.1063/1.110064 |
| format | Article |
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While the InGaP diodes are relatively insensitive to typical processing steps, comparable AlGaAs p-n junction show much larger changes in surface recombination velocities.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.110064</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in interface structures ; Exact sciences and technology ; Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions ; Physics</subject><ispartof>Applied physics letters, 1993-12, Vol.63 (26), p.3610-3612</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-512001840197b65bd11f6103a21dfaa8a576677a6799455032e756b91421dca23</citedby><cites>FETCH-LOGICAL-c354t-512001840197b65bd11f6103a21dfaa8a576677a6799455032e756b91421dca23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3894143$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>PEARTON, S. 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While the InGaP diodes are relatively insensitive to typical processing steps, comparable AlGaAs p-n junction show much larger changes in surface recombination velocities.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in interface structures</subject><subject>Exact sciences and technology</subject><subject>Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions</subject><subject>Physics</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9z81Kw0AUBeBBFKxV8BFm4cLN1Hszf8myFK2FgoK6DjeTGUhJkzCTCr69KRFXhwMfBw5j9wgrBCOfcIUIYNQFWyBYKyRifskWACCFKTRes5uUDlPVmZQLtv44xUDO8-hdf6yajsam7_i3b3vXjI1PfGpD7J1Pydd8123pnQ-i44dT58403bKrQG3yd3-5ZF8vz5-bV7F_2-42671wUqtRaMwAMFeAha2MrmrEYBAkZVgHopy0NcZaMrYolNYgM2-1qQpUE3CUySV7nHdd7FOKPpRDbI4Uf0qE8ny9xHK-PtGHmQ6UHLUhUuea9O9lXihUUv4CeSNVxQ</recordid><startdate>19931227</startdate><enddate>19931227</enddate><creator>PEARTON, S. 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| ispartof | Applied physics letters, 1993-12, Vol.63 (26), p.3610-3612 |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions Physics |
| title | Surface recombination velocities on processed InGaP p-n junctions |
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