Self-aligned passivation on copper interconnection durability against oxidizing ambient annealing

Self-aligned passivation on copper interconnection durability against oxidizing ambient annealing

A self-aligned niobium (Nb) passivation method has been developed in order to improve the stability of copper (Cu) in an oxidizing ambient. A Cu/Nb/SiO2/(100)Si structure was annealed between 400 and 850 °C for 30 min in a gas mixture of H2 and N2. The underlying Nb diffused to the Cu surface and tu...

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Veröffentlicht in:Applied physics letters 1993-08, Vol.63 (7), p.934-936
Hauptverfasser: ITOW, H, NAKASAKI, Y, MINAMIHABA, G, SUGURO, K, OKANO, H
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Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 936
container_issue 7
container_start_page 934
container_title Applied physics letters
container_volume 63
creator ITOW, H
NAKASAKI, Y
MINAMIHABA, G
SUGURO, K
OKANO, H
description A self-aligned niobium (Nb) passivation method has been developed in order to improve the stability of copper (Cu) in an oxidizing ambient. A Cu/Nb/SiO2/(100)Si structure was annealed between 400 and 850 °C for 30 min in a gas mixture of H2 and N2. The underlying Nb diffused to the Cu surface and turned into its nitride at 750 °C. The surface Nb nitride layer acted as a passivation layer against oxidation. The passivated Cu was found to retain its resistivity of 2.0 μΩ cm even after oxidation at 400 °C for 30 min in a dry oxygen ambient.
doi_str_mv 10.1063/1.109849
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subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Self-aligned passivation on copper interconnection durability against oxidizing ambient annealing
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